Infineon
NPN Silicon Digital Transistor; 50V; 100mA; 250mW; 130MHz; Built in bias resistor (R1=22kΩ, R2=22kΩ)
SIPMOS Power Transistor; N-channel Enhancement mode Avalanche-rated dv/dt rated; 55V; 52A; 120W; <0.023 Ohm(37A)
Controller IC for Current Resonant Type Switching Power Supply with Half-Bridge Resonance, High Efficiency and Low Noise
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor Correction
Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™
Reverse conducting IGBT with monolithic body diode; 1200V; 30A; 357W; tf=62ns
Reverse conducting IGBT with monolithic body diode; 1200V; 30A; 254W; tf=46ns
Reverse conducting IGBT with monolithic body diode; 1350V; 40A; 310W; tf=50ns
Reverse Conducting IGBT with monolithic body diode; 1200V; 60A; 349W; tf=39ns
Reverse conducting IGBT with monolithic body diode; 1350V; 60A; 349W; tf=47ns
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode; 1600V; 30A; 312W; tf=38.3ns
High speed Duopack : IGBT in Trench and Fieldstop technology; 600V; 30A; 187W; tf=22ns
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode; 600V; 30A; 187W; 5us; Vce=1.5V