Infineon
NPN Silicon Digital Transistor; 50V; 100mA; 250mW; 130MHz; Built in bias resistor (R1=22kΩ, R2=22kΩ)
SIPMOS Power Transistor; N-channel Enhancement mode Avalanche-rated dv/dt rated; 55V; 52A; 120W; <0.023 Ohm(37A)
Controller IC for Current Resonant Type Switching Power Supply with Half-Bridge Resonance, High Efficiency and Low Noise
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor Correction
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor Correction
Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™
Reverse conducting IGBT with monolithic body diode; 1200V; 30A; 357W; tf=62ns
Reverse conducting IGBT with monolithic body diode; 1200V; 30A; 254W; tf=46ns
Reverse conducting IGBT with monolithic body diode; 1350V; 40A; 310W; tf=50ns
Reverse Conducting IGBT with monolithic body diode; 1200V; 60A; 349W; tf=39ns
Reverse conducting IGBT with monolithic body diode; 1350V; 60A; 349W; tf=47ns
GBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode; 1200V; 50A; 326W; tf=17ns
High speed Duopack : IGBT in Trench and Fieldstop technology; 600V; 30A; 187W; tf=22ns
IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode; 600V; 30A; 187W; 5us; Vce=1.5V
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode; 1200V; 80A; 483W; tf=16ns
TEMPFET; N-channel Enhancement mode Temperature sensor with thyristor characteristic; 50V; 58A; 170W; <0.018 Ohm(47A)
Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection
Standalone Power Factor Correction (PFC) Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS™
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode; 1600V; 30A; 312W; tf=38.3ns
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode; 1200V; 15A; 217W; tf=14ns
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode; 600V; 40A; 166W; tf=42ns
IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode; 1200V; 75A; 480W; tf=94ns
IGBT copacked with RAPID 1 fast and soft antiparallel diode; 650V; 74A; 250W; tf=13ns
high Speed soft switching IGBT with full current rated RAPID 1 diode; 650V; 80A; 274W; tf=34ns
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology; 600V; 80A; 428W; tf=35ns
OptiMOS Power-Transistor; N-channel Logic Level; 55V; 30A; 100W; <23mOhm(22A)
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation; 600V; 41A; 250W; tf=25ns
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode; 600V; 31A; 139W; tf=46ns
