NXP
Surface Mount Schottky Barrier Single/Double Diodes; последовательно включенные
Three-quadrant triacs, insulated, high commutation, high temperature; 800V; 16A; Igt<35mA; Ih<35mA
HV start-up flyback controller with integrated MOSFET for 5 W applications, 905 Hz burst frequency
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ; 50V; 100mA; 250mW; пара PDTC114ET
PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW; 50V; 100mA; 250mW; пара PDTC143ZT
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ; 50V; 100mA; 250mW; пара PDTA114ET
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ; 50V; 100mA; 250mW; пара PDTA143ET
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ; 50V; 100mA; 250mW; пара PDTA144ET