Infineon
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode; 1600V; 30A; 312W; tf=38.3ns
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode; 1200V; 15A; 217W; tf=14ns
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode; 600V; 40A; 166W; tf=42ns
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode; 1200V; 80A; 483W; tf=16ns
IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode; 1200V; 75A; 480W; tf=94ns
IGBT copacked with RAPID 1 fast and soft antiparallel diode; 650V; 74A; 250W; tf=13ns
high Speed soft switching IGBT with full current rated RAPID 1 diode; 650V; 80A; 274W; tf=34ns
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology; 600V; 80A; 428W; tf=35ns
OptiMOS Power-Transistor; N-channel Logic Level; 55V; 30A; 100W; <23mOhm(22A)